This "tip of the day" video examines the International Rectifier (now Viche) IRF830 N-channel MOSFET. The presenter reviews key specifications from its datasheet, including its 500V voltage rating, 0.6 Ohm on-resistance, and derated power handling (~20W practical). The video then demonstrates the component's function as a high-voltage switch using a simple test circuit. Applying 10V to the gate successfully switches 100V across a load, and the saturation voltage (drain-source voltage when on) is measured to be a low 0.2-0.25V, confirming its effective switching capability. The video highlights the importance of understanding datasheet conditions like case temperature for power ratings.
Tip of the Day: Testing the IRF830 High-Voltage MOSFET
0:07 Introduction: The video features a "tip of the day" focused on a specific electronic component.
0:15 Component Identification: The component is an IRF830 N-channel MOSFET, originally International Rectifier, now part of Viche.
0:26 Key Datasheet Specs: It's rated for a healthy 500 volts and has an on-resistance (Rds(on)) of 0.6 Ohms (at 0:34).
0:50 Power and Current Handling: Rated for approximately 4 amps continuous current (~0:55) and 74 Watts power dissipation (0:53), but this requires an infinite heat sink (TC=25C at 1:09). The practical power handling is estimated around 20 watts after derating (1:30).
1:33 Datasheet Graphs: The presenter briefly shows common MOSFET characteristic graphs (e.g., drain current vs. voltage).
2:16 Test Circuit Example: A typical test circuit diagram from the datasheet is shown.
2:42 Practical Test Setup: A simple circuit is set up with a power supply (set to 100V), a 500 ohm resistor as a load, and the IRF830 MOSFET.
4:13 Gate Control: The MOSFET's gate is controlled by applying 10 volts using a power supply.
4:47 High-Voltage Switching Test: The MOSFET successfully switches the 100V supply to the 500 ohm load, drawing 0.2 amps when turned on (4:50-4:55).
5:04 Saturation Voltage Measurement: The voltage across the drain and source of the FET is measured when it is turned on.
5:21 Result: When turned on, the voltage across the FET drops from 100V (off state) down to a low 0.2-0.25 volts, demonstrating its effective switching with minimal voltage drop when saturated.
5:27 Conclusion: The test confirms the IRF830 functions well as a high-voltage switch with a low saturation voltage.