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This post discusses China's recent breakthrough in Extreme Ultraviolet (EUV) lithography, specifically developing a solid-state laser-based Light-Produced Plasma (LPP)-EUV light source at 13.5nm. While its current conversion efficiency is half of ASML's commercial systems, it shows potential for significant improvement. Despite ASML's stance that a full EUV system is years away for China due to its immense complexity and global supply chain, this achievement signals a rapidly shrinking technology gap. China's ambitious target of producing 4nm chips with a domestic toolset by 2026 underscores its pursuit of industrial sovereignty and a shift in the global tech supply chain balance of power, marking a new phase in the semiconductor race.

China's EUV Breakthrough: Reshaping the Global Semiconductor Landscape

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