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Abstract:

This lecture from a "Chemical Processes for Micro and Nano Fabrication" course provides a foundational explanation of the role of mask illumination in optical lithography. The discussion progresses from simple, normally incident light to the more complex and powerful techniques used in modern semiconductor manufacturing. The core concept presented is that by manipulating the angle of illumination—a technique known as oblique or off-axis illumination—it is possible to shift the mask's diffraction pattern relative to the objective lens. This shift enables "two-beam imaging," a method that can theoretically double the resolving power of a lithography system compared to traditional "three-beam imaging," pushing the resolution limit from 0.5 λ/NA down to 0.25 λ/NA. The lecture defines the practical implementation of these techniques through the concepts of spatial coherence (coherent, incoherent, and partially coherent light) and introduces the partial coherence factor (sigma, σ) as the key parameter for controlling the range of illumination angles. Finally, it describes advanced off-axis illumination (OAI) shapes like annular, quadripole, and dipole, which are engineered to optimize resolution for specific mask patterns.

Shaping Light to Print Smaller Features: A Guide to Lithographic Illumination

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